Littelfuse, Inc. Single FETs, MOSFETs IXFN360N10T

Description
N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B
  • Single FETs, MOSFETs - 238-IXFN360N10T-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T - 1191116-IXFN360N10T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFN360N10T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN360N10T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B - 401-IXFN360N10T - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXFN360N10T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFN360N10T-ND
Single FETs, MOSFETs 238-IXFN360N10T-ND
N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B

N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T - 1191116-IXFN360N10T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T
1191116-IXFN360N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T 1191116-IXFN360N10T
Manufacturer: IXYS Win Source Part Number: 1191116-IXFN360N10T Series: HiPerFET Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 360A Family Name: IXFN360N10T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 505nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 36000pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 2.6 mOhm @ 180A, 10V Introduction Date: February 02, 2009 ECCN: EAR99 Country of Origin: Philippines, Republic of Korea Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191116-IXFN360N10T
Series: HiPerFET
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 360A
Family Name: IXFN360N10T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: SOT-227B
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 505nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 36000pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 830W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.6 mOhm @ 180A, 10V
Introduction Date: February 02, 2009
ECCN: EAR99
Country of Origin: Philippines, Republic of Korea
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFN360N10T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN360N10T
Single FETs, MOSFETs IXFN360N10T
MOSFET N-CH 100V 360A SOT-227B

MOSFET N-CH 100V 360A SOT-227B

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN360N10T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN360N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN360N10T
MOSFET N-CH 100V 360A SOT-227B

MOSFET N-CH 100V 360A SOT-227B

Supplier's Site
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B - 401-IXFN360N10T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
401-IXFN360N10T
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B 401-IXFN360N10T
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFN360N10T
MOSFET IXFN360N10T
MOSFET 360 Amps 100V

MOSFET 360 Amps 100V

Buy Now

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXFN360N10T-ND 1191116-IXFN360N10T IXFN360N10T IXFN360N10T 401-IXFN360N10T IXFN360N10T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT-227-4, miniBLOC SOT3 SOT-227-4, miniBLOC SOT-227-4, miniBLOC
QG 505 nC 505 nC
PD 830000 milliwatts 830000 milliwatts 830000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data