Littelfuse, Inc. Single FETs, MOSFETs IXFN360N10T

Description
MOSFET N-CH 100V 360A SOT-227B
  • Single FETs, MOSFETs - IXFN360N10T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 238-IXFN360N10T-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T - 1191116-IXFN360N10T - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN360N10T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B - 401-IXFN360N10T - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
MOSFET N-CH 100V 360A SOT-227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN360N10T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN360N10T
Single FETs, MOSFETs IXFN360N10T
MOSFET N-CH 100V 360A SOT-227B

MOSFET N-CH 100V 360A SOT-227B

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXFN360N10T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFN360N10T-ND
Single FETs, MOSFETs 238-IXFN360N10T-ND
N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B

N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T - 1191116-IXFN360N10T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T
1191116-IXFN360N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T 1191116-IXFN360N10T
Manufacturer: IXYS Win Source Part Number: 1191116-IXFN360N10T Series: HiPerFET Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 360A Family Name: IXFN360N10T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 505nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 36000pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 2.6 mOhm @ 180A, 10V Introduction Date: February 02, 2009 ECCN: EAR99 Country of Origin: Philippines, Republic of Korea Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191116-IXFN360N10T
Series: HiPerFET
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 360A
Family Name: IXFN360N10T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: SOT-227B
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 505nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 36000pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 830W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.6 mOhm @ 180A, 10V
Introduction Date: February 02, 2009
ECCN: EAR99
Country of Origin: Philippines, Republic of Korea
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFN360N10T
MOSFET IXFN360N10T
MOSFET 360 Amps 100V

MOSFET 360 Amps 100V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN360N10T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN360N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN360N10T
MOSFET N-CH 100V 360A SOT-227B

MOSFET N-CH 100V 360A SOT-227B

Supplier's Site
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B - 401-IXFN360N10T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
401-IXFN360N10T
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B 401-IXFN360N10T
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET
Product Number IXFN360N10T 238-IXFN360N10T-ND 1191116-IXFN360N10T IXFN360N10T IXFN360N10T 401-IXFN360N10T
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN360N10T MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 100 volts
IDSS 360000 milliamps
PD 830000 milliwatts 830000 milliwatts 830000 milliwatts
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