Zilog Single FETs, MOSFETs IXFN30N120SK

Description
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Description
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Datasheet
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The IXFN30N120SK is a 1200 V silicon carbide (SiC) MOSFET in the miniBLOC™ (SOT-227B) package with a Kelvin-Source terminal. It has a maximum on-state resistance of 75 mΩ and a continuous drain current rating of 30 A at 25°C. The package features an electrically isolated baseplate with 2.5 kV RMS isolation for 60 seconds or 3 kV RMS for 1 second, creepage and clearance distances up to 10.5 mm, and internal lead inductance below 5 nH. The device is designed for plasma power supplies, enabling high power density, improved thermal performance, and reduced component count through enhanced switching performance and lower parasitic effects.

Datasheet Summary
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The IXFN30N120SK is a 1200 V silicon carbide (SiC) MOSFET in the miniBLOC™ (SOT-227B) package with a Kelvin-Source terminal. It has a maximum on-state resistance of 75 mΩ and a continuous drain current rating of 30 A at 25°C. The package features an electrically isolated baseplate with 2.5 kV RMS isolation for 60 seconds or 3 kV RMS for 1 second, creepage and clearance distances up to 10.5 mm, and internal lead inductance below 5 nH. The device is designed for plasma power supplies, enabling high power density, improved thermal performance, and reduced component count through enhanced switching performance and lower parasitic effects.

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Single FETs, MOSFETs - 238-IXFN30N120SK-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFN30N120SK-ND
Single FETs, MOSFETs 238-IXFN30N120SK-ND
SIC AND MULTICHIP DISCRETE

SIC AND MULTICHIP DISCRETE

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 238-IXFN30N120SK-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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