The IXFN30N120SK is a 1200 V silicon carbide (SiC) MOSFET in the miniBLOC™ (SOT-227B) package with a Kelvin-Source terminal. It has a maximum on-state resistance of 75 mΩ and a continuous drain current rating of 30 A at 25°C. The package features an electrically isolated baseplate with 2.5 kV RMS isolation for 60 seconds or 3 kV RMS for 1 second, creepage and clearance distances up to 10.5 mm, and internal lead inductance below 5 nH. The device is designed for plasma power supplies, enabling high power density, improved thermal performance, and reduced component count through enhanced switching performance and lower parasitic effects.
SIC AND MULTICHIP DISCRETE
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 238-IXFN30N120SK-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |