Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFN30N120P

Description
Manufacturer: IXYS Win Source Part Number: 1324368-IXFN30N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN30 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: IXYS Win Source Part Number: 1324368-IXFN30N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN30 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324368-IXFN30N120P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324368-IXFN30N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324368-IXFN30N120P
Manufacturer: IXYS Win Source Part Number: 1324368-IXFN30N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN30 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324368-IXFN30N120P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN30
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFN30N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN30N120P-ND
Single FETs, MOSFETs IXFN30N120P-ND
N-Channel 1200V 30A (Tc) 890W (Tc) Chassis Mount SOT-227B

N-Channel 1200V 30A (Tc) 890W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30 Amps 1200V 0.35 Rds

MOSFET 30 Amps 1200V 0.35 Rds

Buy Now
Single FETs, MOSFETs - IXFN30N120P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN30N120P
Single FETs, MOSFETs IXFN30N120P
MOSFET N-CH 1200V 30A SOT-227B

MOSFET N-CH 1200V 30A SOT-227B

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN30N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN30N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN30N120P
MOSFET N-CH 1200V 30A SOT-227B

MOSFET N-CH 1200V 30A SOT-227B

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324368-IXFN30N120P IXFN30N120P-ND IXFN30N120P IXFN30N120P IXFN30N120P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 890000 milliwatts 890000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
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