Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFN30N120P

Description
Manufacturer: IXYS Win Source Part Number: 1324368-IXFN30N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN30 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: IXYS Win Source Part Number: 1324368-IXFN30N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN30 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324368-IXFN30N120P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324368-IXFN30N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324368-IXFN30N120P
Manufacturer: IXYS Win Source Part Number: 1324368-IXFN30N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 890W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN30 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324368-IXFN30N120P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 890W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN30
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFN30N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN30N120P-ND
Single FETs, MOSFETs IXFN30N120P-ND
N-Channel 1200V 30A (Tc) 890W (Tc) Chassis Mount SOT-227B

N-Channel 1200V 30A (Tc) 890W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN30N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN30N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN30N120P
MOSFET N-CH 1200V 30A SOT-227B

MOSFET N-CH 1200V 30A SOT-227B

Supplier's Site
Single FETs, MOSFETs - IXFN30N120P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN30N120P
Single FETs, MOSFETs IXFN30N120P
MOSFET N-CH 1200V 30A SOT-227B

MOSFET N-CH 1200V 30A SOT-227B

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30 Amps 1200V 0.35 Rds

MOSFET 30 Amps 1200V 0.35 Rds

Buy Now

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324368-IXFN30N120P IXFN30N120P-ND IXFN30N120P IXFN30N120P IXFN30N120P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 890000 milliwatts 890000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
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