Manufacturer: IXYS
Win Source Part Number: 1191110-IXFN120N20
Packaging: Tube
Mounting Style: Chassis Mount
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: SOT-227-4, miniBLOC
Power Dissipation (Maximum): 600W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 10
MSL Level: Not Applicable
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 17mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 360nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9100pF at 25V
N-Channel 200V 120A (Tc) 600W (Tc) Chassis Mount SOT-227B
MOSFET N-CH 200V 120A SOT-227B
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191110-IXFN120N20 | IXFN120N20-ND | IXFN120N20 | IXFN120N20 |
| Product Name | FETs - Single - IXFN120N20 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 200 volts | |||
| QG | 360 nC | |||
| PD | 600000 milliwatts |
