Manufacturer: IXYS
Win Source Part Number: 1191105-IXFK88N30P
Series: HiPerFET, PolarP2
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Family Name: IXFK88N30P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264AA (IXFK)
Channel Type Type: N
Drain Source Voltage: 300V
Vgs(th) (Maximum) @ Id: 5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 600W (Tc)
Rds On (Maximum) @ Id, Vgs: 40 mOhm @ 44A, 10V
Alternative Parts (Cross-Reference): STW75NF30; STW46NF30; STY60NK30Z;
Introduction Date: May 07, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Unknown
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
MOSFET N-CH 300V 88A TO264AA
N-Channel 300V 88A (Tc) 600W (Tc) Through Hole TO-264AA (IXFK)
MOSFET N-CH 300V 88A TO264AA
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191105-IXFK88N30P | IXFK88N30P | IXFK88N30P-ND | IXFK88N30P | IXFK88N30P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK88N30P | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| QG | 180 nC | ||||
| PD | 600000 milliwatts | 600000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | |
| Packing Method | Bulk; Bulk | Tube; Tube |
