Zilog FETs - Single - IXFK80N50P IXFK80N50P

Description
Manufacturer: IXYS Win Source Part Number: 1191104-IXFK80N50P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 1040W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 65mOhm at 40A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 197nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 12700pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191104-IXFK80N50P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 1040W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 65mOhm at 40A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 197nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 12700pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFK80N50P - 1191104-IXFK80N50P - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFK80N50P
1191104-IXFK80N50P
FETs - Single - IXFK80N50P 1191104-IXFK80N50P
Manufacturer: IXYS Win Source Part Number: 1191104-IXFK80N50P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 1040W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 65mOhm at 40A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 197nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 12700pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191104-IXFK80N50P
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264-3, TO-264AA
Power Dissipation (Maximum): 1040W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 65mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 197nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 12700pF at 25V

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Single FETs, MOSFETs - IXFK80N50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFK80N50P
Single FETs, MOSFETs IXFK80N50P
MOSFET N-CH 500V 80A TO264AA

MOSFET N-CH 500V 80A TO264AA

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFK80N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK80N50P-ND
Single FETs, MOSFETs IXFK80N50P-ND
N-Channel 500V 80A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 500V 80A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK80N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK80N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK80N50P
MOSFET N-CH 500V 80A TO264AA

MOSFET N-CH 500V 80A TO264AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 80A

MOSFET 500V 80A

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191104-IXFK80N50P IXFK80N50P IXFK80N50P-ND IXFK80N50P IXFK80N50P
Product Name FETs - Single - IXFK80N50P Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
QG 197 nC
PD 1.04E6 milliwatts 1.04E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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