Manufacturer: IXYS
Win Source Part Number: 1191101-IXFK64N60P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Family Name: IXFK 64N60P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264AA (IXFK)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 12000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1040W (Tc)
Rds On (Maximum) @ Id, Vgs: 96 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): STW36N55M5; R6535ENZVC8; STW36NM60ND;
Introduction Date: May 07, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Unknown
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
N-Channel 600V 64A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
MOSFET N-CH 600V 64A TO264AA
MOSFET N-CH 600V 64A TO264AA
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191101-IXFK64N60P | IXFK64N60P-ND | IXFK64N60P | IXFK64N60P | IXFK64N60P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK64N60P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Package Type | SOT3 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Packing Method | Tube; Tube | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
