Manufacturer: IXYS
Win Source Part Number: 1191095-IXFK44N80P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Family Name: IXFK44N80P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264AA (IXFK)
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 198nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 12000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1040W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 22A, 10V
Alternative Parts (Cross-Reference): STW30N80K5;
Introduction Date: May 13, 2006
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Unknown
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 25
N-Channel 800V 44A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
MOSFET N-CH 800V 44A TO264AA
MOSFET N-CH 800V 44A TO264AA
MOSFET, N, TO-264, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:800V, CONTINUOUS DRAIN CURRENT ID:44A, ON RESISTANCE RDS(ON):0.19OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:5VROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191095-IXFK44N80P | 238-IXFK44N80P-ND | IXFK44N80P | IXFK44N80P | 38654257 | IXFK44N80P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK44N80P | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| QG | 198 nC | |||||
| PD | 1.04E6 milliwatts | 1.04E6 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | ||
| Packing Method | Tube; Tube | Tube; Tube |