Zilog FETs - Single - IXFK32N100P IXFK32N100P

Description
Manufacturer: IXYS Win Source Part Number: 1191090-IXFK32N100P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 960W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 320mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 6.5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 225nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 14200pF at 25V
  • FETs - Single - IXFK32N100P - 1191090-IXFK32N100P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFK32N100P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK32N100P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191090-IXFK32N100P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 960W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 320mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 6.5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 225nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 14200pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFK32N100P - 1191090-IXFK32N100P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFK32N100P
1191090-IXFK32N100P
FETs - Single - IXFK32N100P 1191090-IXFK32N100P
Manufacturer: IXYS Win Source Part Number: 1191090-IXFK32N100P Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 960W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 320mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 6.5V at 1mA Gate Charge (Qg) (Maximum) at Vgs: 225nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 14200pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191090-IXFK32N100P
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264-3, TO-264AA
Power Dissipation (Maximum): 960W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 32A
Rds On (Maximum) at Id, Vgs: 320mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 6.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs: 225nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 14200pF at 25V

Buy Now
Single FETs, MOSFETs - IXFK32N100P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK32N100P-ND
Single FETs, MOSFETs IXFK32N100P-ND
N-Channel 1000V 32A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 1000V 32A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK32N100P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK32N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK32N100P
MOSFET N-CH 1000V 32A TO264AA

MOSFET N-CH 1000V 32A TO264AA

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFK32N100P
MOSFET IXFK32N100P
MOSFET 32 Amps 1000V 0.32 Rds

MOSFET 32 Amps 1000V 0.32 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191090-IXFK32N100P IXFK32N100P-ND IXFK32N100P IXFK32N100P
Product Name FETs - Single - IXFK32N100P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 1000 volts
QG 225 nC
PD 960000 milliwatts
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