Littelfuse, Inc. Single FETs, MOSFETs IXFK27N80Q

Description
MOSFET N-CH 800V 27A TO264AA
Request a Quote Datasheet
Description
MOSFET N-CH 800V 27A TO264AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFK27N80Q - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFK27N80Q
Single FETs, MOSFETs IXFK27N80Q
MOSFET N-CH 800V 27A TO264AA

MOSFET N-CH 800V 27A TO264AA

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFK27N80Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK27N80Q-ND
Single FETs, MOSFETs IXFK27N80Q-ND
N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q - 205684-IXFK27N80Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q
205684-IXFK27N80Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q 205684-IXFK27N80Q
Manufacturer: IXYS Win Source Part Number: 205684-IXFK27N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 320 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205684-IXFK27N80Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264AA (IXFK)
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 7600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 320 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK27N80Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK27N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK27N80Q
MOSFET N-CH 800V 27A TO264AA

MOSFET N-CH 800V 27A TO264AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 27 Amps 800V 0.32 Rds

MOSFET 27 Amps 800V 0.32 Rds

Buy Now Datasheet
MOSFET N-CH 800V 27A TO-264 - 401-IXFK27N80Q - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 27A TO-264
401-IXFK27N80Q
MOSFET N-CH 800V 27A TO-264 401-IXFK27N80Q
MOSFET N-CH 800V 27A TO-264

MOSFET N-CH 800V 27A TO-264

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK27N80Q IXFK27N80Q-ND 205684-IXFK27N80Q IXFK27N80Q IXFK27N80Q 401-IXFK27N80Q
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 800V 27A TO-264
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 800 volts 800 volts 800 volts
IDSS 27000 milliamps
PD 500000 milliwatts 500000 milliwatts 500000 milliwatts
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