Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q IXFK27N80Q

Description
Manufacturer: IXYS Win Source Part Number: 205684-IXFK27N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 320 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q - 205684-IXFK27N80Q - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFK27N80Q-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IXFK27N80Q - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK27N80Q - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 800V 27A TO-264 - 401-IXFK27N80Q - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205684-IXFK27N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 320 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q - 205684-IXFK27N80Q - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q
205684-IXFK27N80Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q 205684-IXFK27N80Q
Manufacturer: IXYS Win Source Part Number: 205684-IXFK27N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 320 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205684-IXFK27N80Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264AA (IXFK)
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 7600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 320 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFK27N80Q-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK27N80Q-ND
Single FETs, MOSFETs IXFK27N80Q-ND
N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

Buy Now Datasheet
Single FETs, MOSFETs - IXFK27N80Q - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFK27N80Q
Single FETs, MOSFETs IXFK27N80Q
MOSFET N-CH 800V 27A TO264AA

MOSFET N-CH 800V 27A TO264AA

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFK27N80Q
MOSFET IXFK27N80Q
MOSFET 27 Amps 800V 0.32 Rds

MOSFET 27 Amps 800V 0.32 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK27N80Q - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK27N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK27N80Q
MOSFET N-CH 800V 27A TO264AA

MOSFET N-CH 800V 27A TO264AA

Supplier's Site
MOSFET N-CH 800V 27A TO-264 - 401-IXFK27N80Q - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 27A TO-264
401-IXFK27N80Q
MOSFET N-CH 800V 27A TO-264 401-IXFK27N80Q
MOSFET N-CH 800V 27A TO-264

MOSFET N-CH 800V 27A TO-264

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205684-IXFK27N80Q IXFK27N80Q-ND IXFK27N80Q IXFK27N80Q IXFK27N80Q 401-IXFK27N80Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK27N80Q Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 800V 27A TO-264
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 800 volts 800 volts 800 volts
PD 500000 milliwatts 500000 milliwatts 500000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-264AA (IXFK) TO-264-3, TO-264AA TO-264-3, TO-264AA Through Hole
Unlock Full Specs
to access all available technical data