N-Channel 1200V 26A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)
Manufacturer: IXYS
Win Source Part Number: 1191089-IXFK26N120P
Series: HiPerFET, PolarP2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Family Name: IXFK26N120P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264AA (IXFK)
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 16000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 960W (Tc)
Rds On (Maximum) @ Id, Vgs: 460 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): SCT10N120AG; SCT2450KEC; SCT10N120;
Introduction Date: September 25, 2007
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N-CH 1200V 26A TO264AA
MOSFET N-CH 1200V 26A TO264AA
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 238-IXFK26N120P-ND | 1191089-IXFK26N120P | IXFK26N120P | IXFK26N120P | IXFK26N120P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK26N120P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-264-3, TO-264AA | SOT3 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | |
| QG | 225 nC | ||||
| PD | 960000 milliwatts | 960000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
