Zilog Single FETs, MOSFETs IXFK200N10P

Description
N-Channel 100V 200A (Tc) 830W (Tc) Through Hole TO-264AA (IXFK)
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Description
N-Channel 100V 200A (Tc) 830W (Tc) Through Hole TO-264AA (IXFK)
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFK200N10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK200N10P-ND
Single FETs, MOSFETs IXFK200N10P-ND
N-Channel 100V 200A (Tc) 830W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 100V 200A (Tc) 830W (Tc) Through Hole TO-264AA (IXFK)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK200N10P - 1191084-IXFK200N10P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK200N10P
1191084-IXFK200N10P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK200N10P 1191084-IXFK200N10P
Manufacturer: IXYS Win Source Part Number: 1191084-IXFK200N10P Series: HiPerFET, PolarP2 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Family Name: IXFK200N10P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: TO-264AA (IXFK) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 7600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 7.5 mOhm @ 100A, 10V Alternative Parts (Cross-Reference): STW120NF10; IRFP4310Z; IRFP4310ZPBF; Introduction Date: May 15, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191084-IXFK200N10P
Series: HiPerFET, PolarP2
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Family Name: IXFK200N10P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: TO-264AA (IXFK)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 235nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 830W (Tc)
Rds On (Maximum) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): STW120NF10; IRFP4310Z; IRFP4310ZPBF;
Introduction Date: May 15, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET 200 Amps 100V 0.0075 Rds

MOSFET 200 Amps 100V 0.0075 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK200N10P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK200N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK200N10P
MOSFET N-CH 100V 200A TO264AA

MOSFET N-CH 100V 200A TO264AA

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFK200N10P-ND 1191084-IXFK200N10P IXFK200N10P IXFK200N10P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK200N10P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-264-3, TO-264AA SOT3 TO-264-3, TO-264AA
QG 235 nC
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