Zilog FETs - Single - IXFK180N07 IXFK180N07

Description
Manufacturer: IXYS Win Source Part Number: 1191082-IXFK180N07 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 568W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 70V Id - Continuous Drain Current: 180A Rds On (Maximum) at Id, Vgs: 6mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 420nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191082-IXFK180N07 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 568W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 70V Id - Continuous Drain Current: 180A Rds On (Maximum) at Id, Vgs: 6mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 420nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFK180N07 - 1191082-IXFK180N07 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFK180N07
1191082-IXFK180N07
FETs - Single - IXFK180N07 1191082-IXFK180N07
Manufacturer: IXYS Win Source Part Number: 1191082-IXFK180N07 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 568W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 70V Id - Continuous Drain Current: 180A Rds On (Maximum) at Id, Vgs: 6mOhm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 420nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191082-IXFK180N07
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264-3, TO-264AA
Power Dissipation (Maximum): 568W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 70V
Id - Continuous Drain Current: 180A
Rds On (Maximum) at Id, Vgs: 6mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 420nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK180N07 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK180N07
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK180N07
MOSFET N-CH 70V 180A TO-264AA

MOSFET N-CH 70V 180A TO-264AA

Supplier's Site
Single FETs, MOSFETs - IXFK180N07 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFK180N07
Single FETs, MOSFETs IXFK180N07
MOSFET N-CH 70V 180A TO-264AA

MOSFET N-CH 70V 180A TO-264AA

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 180 Amps 70V 0.006 Rds

MOSFET 180 Amps 70V 0.006 Rds

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191082-IXFK180N07 IXFK180N07 IXFK180N07 IXFK180N07
Product Name FETs - Single - IXFK180N07 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 70 volts 70 volts
QG 420 nC
PD 568000 milliwatts 568000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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