Zilog FETs - Single - IXFK160N30T IXFK160N30T

Description
Manufacturer: IXYS Win Source Part Number: 1191081-IXFK160N30T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 1390W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 300V Id - Continuous Drain Current: 160A Rds On (Maximum) at Id, Vgs: 19mOhm at 60A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 335nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 28000pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191081-IXFK160N30T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 1390W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 300V Id - Continuous Drain Current: 160A Rds On (Maximum) at Id, Vgs: 19mOhm at 60A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 335nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 28000pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFK160N30T - 1191081-IXFK160N30T - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFK160N30T
1191081-IXFK160N30T
FETs - Single - IXFK160N30T 1191081-IXFK160N30T
Manufacturer: IXYS Win Source Part Number: 1191081-IXFK160N30T Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 1390W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 300V Id - Continuous Drain Current: 160A Rds On (Maximum) at Id, Vgs: 19mOhm at 60A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 335nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 28000pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191081-IXFK160N30T
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264-3, TO-264AA
Power Dissipation (Maximum): 1390W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 300V
Id - Continuous Drain Current: 160A
Rds On (Maximum) at Id, Vgs: 19mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 335nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 28000pF at 25V

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Single FETs, MOSFETs - 238-IXFK160N30T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFK160N30T-ND
Single FETs, MOSFETs 238-IXFK160N30T-ND
N-Channel 300V 160A (Tc) 1390W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 300V 160A (Tc) 1390W (Tc) Through Hole TO-264AA (IXFK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK160N30T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK160N30T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK160N30T
MOSFET N-CH 300V 160A TO264AA

MOSFET N-CH 300V 160A TO264AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 160A 300V

MOSFET 160A 300V

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191081-IXFK160N30T 238-IXFK160N30T-ND IXFK160N30T IXFK160N30T
Product Name FETs - Single - IXFK160N30T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts
QG 335 nC
PD 1.39E6 milliwatts
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