Zilog FETs - Single - IXFK150N15 IXFK150N15

Description
Manufacturer: IXYS Win Source Part Number: 1191080-IXFK150N15 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 560W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 150A Rds On (Maximum) at Id, Vgs: 12.5mOhm at 75A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 360nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9100pF at 25V
  • FETs - Single - IXFK150N15 - 1191080-IXFK150N15 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFK150N15-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK150N15 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191080-IXFK150N15 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 560W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 150A Rds On (Maximum) at Id, Vgs: 12.5mOhm at 75A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 360nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9100pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFK150N15 - 1191080-IXFK150N15 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFK150N15
1191080-IXFK150N15
FETs - Single - IXFK150N15 1191080-IXFK150N15
Manufacturer: IXYS Win Source Part Number: 1191080-IXFK150N15 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-264-3, TO-264AA Power Dissipation (Maximum): 560W Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 150A Rds On (Maximum) at Id, Vgs: 12.5mOhm at 75A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 360nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9100pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191080-IXFK150N15
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264-3, TO-264AA
Power Dissipation (Maximum): 560W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 150A
Rds On (Maximum) at Id, Vgs: 12.5mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 360nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9100pF at 25V

Buy Now
Single FETs, MOSFETs - IXFK150N15-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK150N15-ND
Single FETs, MOSFETs IXFK150N15-ND
N-Channel 150V 150A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 150V 150A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFK150N15
MOSFET IXFK150N15
MOSFET 150 Amps 150V 0.0125 Rds

MOSFET 150 Amps 150V 0.0125 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK150N15 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK150N15
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK150N15
MOSFET N-CH 150V 150A TO264AA

MOSFET N-CH 150V 150A TO264AA

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191080-IXFK150N15 IXFK150N15-ND IXFK150N15 IXFK150N15
Product Name FETs - Single - IXFK150N15 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts
QG 360 nC
PD 560000 milliwatts
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