Manufacturer: IXYS
Win Source Part Number: 1191080-IXFK150N15
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-264-3, TO-264AA
Power Dissipation (Maximum): 560W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 150A
Rds On (Maximum) at Id, Vgs: 12.5mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 360nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9100pF at 25V
N-Channel 150V 150A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)
MOSFET N-CH 150V 150A TO264AA
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191080-IXFK150N15 | IXFK150N15-ND | IXFK150N15 | IXFK150N15 |
| Product Name | FETs - Single - IXFK150N15 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 150 volts | |||
| QG | 360 nC | |||
| PD | 560000 milliwatts |
