Zilog Single FETs, MOSFETs IXFH86N30T

Description
MOSFET N-CH 300V 86A TO247AD
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Description
MOSFET N-CH 300V 86A TO247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH86N30T - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH86N30T
Single FETs, MOSFETs IXFH86N30T
MOSFET N-CH 300V 86A TO247AD

MOSFET N-CH 300V 86A TO247AD

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFH86N30T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH86N30T-ND
Single FETs, MOSFETs IXFH86N30T-ND
N-Channel 300V 86A (Tc) 860W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 300V 86A (Tc) 860W (Tc) Through Hole TO-247AD (IXFH)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH86N30T - 1049458-IXFH86N30T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH86N30T
1049458-IXFH86N30T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH86N30T 1049458-IXFH86N30T
Manufacturer: IXYS Win Source Part Number: 1049458-IXFH86N30T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 860W (Tc) Family Name: IXFH86N30T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 86A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 180nC @ 10V Max Input Capacitance: 11300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 43 mOhm @ 43A, 10V Alternative Parts (Cross-Reference): STW75NF30; FDAF75N28; IRFP4242PBF; STW46NF30; Introduction Date: March 28, 2014 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049458-IXFH86N30T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 860W (Tc)
Family Name: IXFH86N30T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 86A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 11300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 43 mOhm @ 43A, 10V
Alternative Parts (Cross-Reference): STW75NF30; FDAF75N28; IRFP4242PBF; STW46NF30;
Introduction Date: March 28, 2014
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Trench HiperFET Power MOSFET

MOSFET Trench HiperFET Power MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH86N30T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH86N30T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH86N30T
MOSFET N-CH 300V 86A TO247AD

MOSFET N-CH 300V 86A TO247AD

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFH86N30T IXFH86N30T-ND 1049458-IXFH86N30T IXFH86N30T IXFH86N30T
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH86N30T MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 300 volts 300 volts
IDSS 86000 milliamps
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