MOSFET N-CH 300V 86A TO247AD
N-Channel 300V 86A (Tc) 860W (Tc) Through Hole TO-247AD (IXFH)
Manufacturer: IXYS
Win Source Part Number: 1049458-IXFH86N30T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 860W (Tc)
Family Name: IXFH86N30T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 86A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 11300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 43 mOhm @ 43A, 10V
Alternative Parts (Cross-Reference): STW75NF30; FDAF75N28; IRFP4242PBF; STW46NF30;
Introduction Date: March 28, 2014
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 300V 86A TO247AD
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH86N30T | IXFH86N30T-ND | 1049458-IXFH86N30T | IXFH86N30T | IXFH86N30T |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH86N30T | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 300 volts | 300 volts | |||
| IDSS | 86000 milliamps |