Manufacturer: IXYS
Win Source Part Number: 1191074-IXFH80N10
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 12.5mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4800pF at 25V
MOSFET N-CH 100V 80A TO247AD
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191074-IXFH80N10 | IXFH80N10 | IXFH80N10 |
| Product Name | FETs - Single - IXFH80N10 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 100 volts | ||
| QG | 180 nC | ||
| PD | 300000 milliwatts |