Zilog FETs - Single - IXFH80N10 IXFH80N10

Description
Manufacturer: IXYS Win Source Part Number: 1191074-IXFH80N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 12.5mOhm at 40A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4800pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191074-IXFH80N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 12.5mOhm at 40A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4800pF at 25V
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Suppliers

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Supplier Links
FETs - Single - IXFH80N10 - 1191074-IXFH80N10 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFH80N10
1191074-IXFH80N10
FETs - Single - IXFH80N10 1191074-IXFH80N10
Manufacturer: IXYS Win Source Part Number: 1191074-IXFH80N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 80A Rds On (Maximum) at Id, Vgs: 12.5mOhm at 40A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4800pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191074-IXFH80N10
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 80A
Rds On (Maximum) at Id, Vgs: 12.5mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4800pF at 25V

Buy Now
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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191074-IXFH80N10 IXFH80N10 IXFH80N10
Product Name FETs - Single - IXFH80N10 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
QG 180 nC
PD 300000 milliwatts
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