Manufacturer: IXYS
Win Source Part Number: 1049444-IXFH66N20Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 66A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 3700pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 40 mOhm @ 33A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 200V 66A TO247AD
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049444-IXFH66N20Q | IXFH66N20Q |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH66N20Q | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 200 volts | |
| PD | 400000 milliwatts |
