Manufacturer: IXYS
Win Source Part Number: 777613-IXFH60N60X
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 143nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5800pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 890W (Tc)
Rds On (Maximum) @ Id, Vgs: 55 mOhm @ 30A, 10V
ECCN: EAR99
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
N-Channel 600V 60A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 600V 60A TO247
MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 777613-IXFH60N60X | IXFH60N60X-ND | IXFH60N60X | IXFH60N60X |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH60N60X | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| QG | 143 nC | |||
| PD | 890000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
