Zilog Single FETs, MOSFETs IXFH60N60X

Description
N-Channel 600V 60A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
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Description
N-Channel 600V 60A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH60N60X-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH60N60X-ND
Single FETs, MOSFETs IXFH60N60X-ND
N-Channel 600V 60A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)

N-Channel 600V 60A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH60N60X - 777613-IXFH60N60X - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH60N60X
777613-IXFH60N60X
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH60N60X 777613-IXFH60N60X
Manufacturer: IXYS Win Source Part Number: 777613-IXFH60N60X Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5800pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 890W (Tc) Rds On (Maximum) @ Id, Vgs: 55 mOhm @ 30A, 10V ECCN: EAR99 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777613-IXFH60N60X
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 143nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5800pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 890W (Tc)
Rds On (Maximum) @ Id, Vgs: 55 mOhm @ 30A, 10V
ECCN: EAR99
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH60N60X - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH60N60X
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH60N60X
MOSFET N-CH 600V 60A TO247

MOSFET N-CH 600V 60A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DISCMSFT NCH ULTRJNCTN XCLASS

MOSFET DISCMSFT NCH ULTRJNCTN XCLASS

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH60N60X-ND 777613-IXFH60N60X IXFH60N60X IXFH60N60X
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH60N60X Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3
QG 143 nC
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