Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH30N50P IXFH30N50P

Description
Manufacturer: IXYS Win Source Part Number: 205679-IXFH30N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205679-IXFH30N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH30N50P - 205679-IXFH30N50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH30N50P
205679-IXFH30N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH30N50P 205679-IXFH30N50P
Manufacturer: IXYS Win Source Part Number: 205679-IXFH30N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205679-IXFH30N50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 460W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 4150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFH30N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH30N50P-ND
Single FETs, MOSFETs 238-IXFH30N50P-ND
N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Single FETs, MOSFETs - IXFH30N50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH30N50P
Single FETs, MOSFETs IXFH30N50P
MOSFET N-CH 500V 30A TO247AD

MOSFET N-CH 500V 30A TO247AD

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH30N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH30N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH30N50P
MOSFET N-CH 500V 30A TO247AD

MOSFET N-CH 500V 30A TO247AD

Supplier's Site
Transistor - 38654201 - Radwell International
Willingboro, NJ, United States
Transistor
38654201
Transistor 38654201
TRANSISTOR, HIPERFET SERIES, MOSFET (METAL OXIDE), N-CHANNEL, 500 V, 30 A, 460W (TC), THROUGH HOLE MOUNTING. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, HIPERFET SERIES, MOSFET (METAL OXIDE), N-CHANNEL, 500 V, 30 A, 460W (TC), THROUGH HOLE MOUNTING. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 30A

MOSFET 500V 30A

Buy Now

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205679-IXFH30N50P 238-IXFH30N50P-ND IXFH30N50P IXFH30N50P 38654201 IXFH30N50P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH30N50P Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 500 volts 500 volts
PD 460000 milliwatts 460000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data