Manufacturer: IXYS
Win Source Part Number: 205679-IXFH30N50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 460W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 4150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 500V 30A TO247AD
MOSFET N-CH 500V 30A TO247AD
TRANSISTOR, HIPERFET SERIES, MOSFET (METAL OXIDE), N-CHANNEL, 500 V, 30 A, 460W (TC), THROUGH HOLE MOUNTING. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205679-IXFH30N50P | 238-IXFH30N50P-ND | IXFH30N50P | IXFH30N50P | 38654201 | IXFH30N50P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH30N50P | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | ||||
| PD | 460000 milliwatts | 460000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
