Manufacturer: IXYS
Win Source Part Number: 1049406-IXFH26N50P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 230 mOhm @ 132A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 30
N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 500V 26A TO247AD
MOSFET Polar3 HiPerFET Power MOSFET
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 1049406-IXFH26N50P3 | 238-IXFH26N50P3-ND | IXFH26N50P3 | IXFH26N50P3 | 401-IXFH26N50P3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50P3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET Polar3 HiPerFET Power MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 500 volts | ||||
| PD | 500000 milliwatts | 500000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
