Littelfuse, Inc. Single FETs, MOSFETs IXFH26N50P3

Description
N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXFH26N50P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH26N50P3-ND
Single FETs, MOSFETs 238-IXFH26N50P3-ND
N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50P3 - 1049406-IXFH26N50P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50P3
1049406-IXFH26N50P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50P3 1049406-IXFH26N50P3
Manufacturer: IXYS Win Source Part Number: 1049406-IXFH26N50P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2220pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 132A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049406-IXFH26N50P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 230 mOhm @ 132A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 30

Buy Now Datasheet
MOSFET Polar3 HiPerFET Power MOSFET - 401-IXFH26N50P3 - Utmel Electronic Limited
Hong Kong, China
MOSFET Polar3 HiPerFET Power MOSFET
401-IXFH26N50P3
MOSFET Polar3 HiPerFET Power MOSFET 401-IXFH26N50P3
MOSFET Polar3 HiPerFET Power MOSFET

MOSFET Polar3 HiPerFET Power MOSFET

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH26N50P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH26N50P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH26N50P3
MOSFET N-CH 500V 26A TO247AD

MOSFET N-CH 500V 26A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Polar3 HiPerFET Power MOSFET

MOSFET Polar3 HiPerFET Power MOSFET

Buy Now

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXFH26N50P3-ND 1049406-IXFH26N50P3 401-IXFH26N50P3 IXFH26N50P3 IXFH26N50P3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50P3 MOSFET Polar3 HiPerFET Power MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
V(BR)DSS 500 volts
PD 500000 milliwatts 500000 milliwatts
Unlock Full Specs
to access all available technical data