Zilog Single FETs, MOSFETs IXFH22N50P

Description
N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-247AD (IXFH)
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Description
N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 238-IXFH22N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH22N50P-ND
Single FETs, MOSFETs 238-IXFH22N50P-ND
N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH22N50P - 1191060-IXFH22N50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH22N50P
1191060-IXFH22N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH22N50P 1191060-IXFH22N50P
Manufacturer: IXYS Win Source Part Number: 1191060-IXFH22N50P Series: HiPerFET, PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Family Name: IXFH22N50P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2630pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 350W (Tc) Rds On (Maximum) @ Id, Vgs: 270 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): AP18N50W; MDQ18N50GTH; MDQ18N50GTP; Introduction Date: May 10, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1191060-IXFH22N50P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Family Name: IXFH22N50P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2630pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 350W (Tc)
Rds On (Maximum) @ Id, Vgs: 270 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): AP18N50W; MDQ18N50GTH; MDQ18N50GTP;
Introduction Date: May 10, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXFH22N50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH22N50P
Single FETs, MOSFETs IXFH22N50P
MOSFET N-CH 500V 22A TO247AD

MOSFET N-CH 500V 22A TO247AD

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 500V 22A

MOSFET 500V 22A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH22N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH22N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH22N50P
MOSFET N-CH 500V 22A TO247AD

MOSFET N-CH 500V 22A TO247AD

Supplier's Site
Transistor - 93853153 - Radwell International
Willingboro, NJ, United States
Transistor
93853153
Transistor 93853153
POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 500V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 500V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 238-IXFH22N50P-ND 1191060-IXFH22N50P IXFH22N50P IXFH22N50P IXFH22N50P 93853153
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH22N50P Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3
QG 50 nC
PD 350000 milliwatts 350000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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