Manufacturer: IXYS
Win Source Part Number: 1191053-IXFH15N80
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 30
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 15A
Rds On (Maximum) at Id, Vgs: 600mOhm at 7.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4870pF at 25V
MOSFET, N, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:15A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):600MOHM; RDS(O. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 800V 15A TO-247AD
MOSFET N-CH 800V 15A TO247AD
| Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1191053-IXFH15N80 | 38654177 | IXFH15N80 | 401-IXFH15N80 | IXFH15N80 |
| Product Name | FETs - Single - IXFH15N80 | Transistor | MOSFET | MOSFET N-CH 800V 15A TO-247AD | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||||
| V(BR)DSS | 800 volts | 800 volts | |||
| QG | 200 nC | ||||
| PD | 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
