Littelfuse, Inc. FETs - Single - IXFH15N80 IXFH15N80

Description
Manufacturer: IXYS Win Source Part Number: 1191053-IXFH15N80 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 15A Rds On (Maximum) at Id, Vgs: 600mOhm at 7.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4870pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191053-IXFH15N80 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 15A Rds On (Maximum) at Id, Vgs: 600mOhm at 7.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4870pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFH15N80 - 1191053-IXFH15N80 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFH15N80
1191053-IXFH15N80
FETs - Single - IXFH15N80 1191053-IXFH15N80
Manufacturer: IXYS Win Source Part Number: 1191053-IXFH15N80 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AD (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 300W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 30 Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 15A Rds On (Maximum) at Id, Vgs: 600mOhm at 7.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 4870pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191053-IXFH15N80
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 30
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 15A
Rds On (Maximum) at Id, Vgs: 600mOhm at 7.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4870pF at 25V

Buy Now
MOSFET N-CH 800V 15A TO-247AD - 401-IXFH15N80 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 15A TO-247AD
401-IXFH15N80
MOSFET N-CH 800V 15A TO-247AD 401-IXFH15N80
MOSFET N-CH 800V 15A TO-247AD

MOSFET N-CH 800V 15A TO-247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 800V 15A

MOSFET 800V 15A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH15N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH15N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH15N80
MOSFET N-CH 800V 15A TO247AD

MOSFET N-CH 800V 15A TO247AD

Supplier's Site
Transistor - 38654177 - Radwell International
Willingboro, NJ, United States
Transistor
38654177
Transistor 38654177
MOSFET, N, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:15A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):600MOHM; RDS(O. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:15A; DRAIN SOURCE VOLTAGE VDS:800V; ON RESISTANCE RDS(ON):600MOHM; RDS(O. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1191053-IXFH15N80 401-IXFH15N80 IXFH15N80 IXFH15N80 38654177
Product Name FETs - Single - IXFH15N80 MOSFET N-CH 800V 15A TO-247AD MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 800 volts 800 volts
QG 200 nC
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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