Manufacturer: IXYS
Win Source Part Number: 1049376-IXFH150N17T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 880W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 175V
Continuous Drain Current at 25°C: 150A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 233nC @ 10V
Max Input Capacitance: 14600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
N-Channel 175V 150A (Tc) 880W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 175V 150A TO247AD
MOSFET N-CH 175V 150A TO247AD
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049376-IXFH150N17T2 | IXFH150N17T2-ND | IXFH150N17T2 | IXFH150N17T2 | IXFH150N17T2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH150N17T2 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 175 volts | 175 volts | |||
| PD | 880000 milliwatts | 880000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
