Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH14N80P IXFH14N80P

Description
Manufacturer: IXYS Win Source Part Number: 1191050-IXFH14N80P Series: HiPerFET, PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Family Name: IXFH14N80P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3900pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 400W (Tc) Rds On (Maximum) @ Id, Vgs: 720 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW9N80K5; STW10NK80Z; STW12NK80Z; Introduction Date: August 10, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191050-IXFH14N80P Series: HiPerFET, PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Family Name: IXFH14N80P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3900pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 400W (Tc) Rds On (Maximum) @ Id, Vgs: 720 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW9N80K5; STW10NK80Z; STW12NK80Z; Introduction Date: August 10, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH14N80P - 1191050-IXFH14N80P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH14N80P
1191050-IXFH14N80P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH14N80P 1191050-IXFH14N80P
Manufacturer: IXYS Win Source Part Number: 1191050-IXFH14N80P Series: HiPerFET, PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Family Name: IXFH14N80P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3900pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 400W (Tc) Rds On (Maximum) @ Id, Vgs: 720 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW9N80K5; STW10NK80Z; STW12NK80Z; Introduction Date: August 10, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191050-IXFH14N80P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Family Name: IXFH14N80P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 61nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3900pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 400W (Tc)
Rds On (Maximum) @ Id, Vgs: 720 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): STW9N80K5; STW10NK80Z; STW12NK80Z;
Introduction Date: August 10, 2006
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
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Single FETs, MOSFETs
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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH14N80P - Shenzhen Shengyu Electronics Technology Limited
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH14N80P
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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191050-IXFH14N80P IXFH14N80P-ND IXFH14N80P IXFH14N80P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH14N80P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
QG 61 nC
PD 400000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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