MOSFET N-CH 900V 12A TO247AD
Manufacturer: IXYS
Win Source Part Number: 1049366-IXFH12N90P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 3080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 900 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
N-Channel 900V 12A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 900V 12A TO247AD
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH12N90P | 1049366-IXFH12N90P | IXFH12N90P-ND | IXFH12N90P | IXFH12N90P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N90P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 900 volts | 900 volts | |||
| IDSS | 12000 milliamps |
