Littelfuse, Inc. Single FETs, MOSFETs IXFH12N90P

Description
N-Channel 900V 12A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)
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Description
N-Channel 900V 12A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFH12N90P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH12N90P-ND
Single FETs, MOSFETs IXFH12N90P-ND
N-Channel 900V 12A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 900V 12A (Tc) 380W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Single FETs, MOSFETs - IXFH12N90P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH12N90P
Single FETs, MOSFETs IXFH12N90P
MOSFET N-CH 900V 12A TO247AD

MOSFET N-CH 900V 12A TO247AD

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N90P - 1049366-IXFH12N90P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N90P
1049366-IXFH12N90P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N90P 1049366-IXFH12N90P
Manufacturer: IXYS Win Source Part Number: 1049366-IXFH12N90P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 380W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 3080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 900 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049366-IXFH12N90P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 3080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 900 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds

MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH12N90P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH12N90P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH12N90P
MOSFET N-CH 900V 12A TO247AD

MOSFET N-CH 900V 12A TO247AD

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFH12N90P-ND IXFH12N90P 1049366-IXFH12N90P IXFH12N90P IXFH12N90P
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N90P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 900 volts 900 volts
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