Zilog Single FETs, MOSFETs IXFH12N80P

Description
N-Channel 800V 12A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
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Description
N-Channel 800V 12A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFH12N80P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH12N80P-ND
Single FETs, MOSFETs IXFH12N80P-ND
N-Channel 800V 12A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 800V 12A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N80P - 1191045-IXFH12N80P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N80P
1191045-IXFH12N80P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N80P 1191045-IXFH12N80P
Manufacturer: IXYS Win Source Part Number: 1191045-IXFH12N80P Series: HiPerFET, PolarHT Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: IXFH12N80P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 360W (Tc) Rds On (Maximum) @ Id, Vgs: 850 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): APT12M80B; STW9NC80Z; STW9N80K5; Introduction Date: November 01, 2005 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191045-IXFH12N80P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: IXFH12N80P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 850 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): APT12M80B; STW9NC80Z; STW9N80K5;
Introduction Date: November 01, 2005
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH12N80P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH12N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH12N80P
MOSFET N-CH 800V 12A TO247AD

MOSFET N-CH 800V 12A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DIODE Id12 BVdass800

MOSFET DIODE Id12 BVdass800

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH12N80P-ND 1191045-IXFH12N80P IXFH12N80P IXFH12N80P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N80P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3
QG 51 nC
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