Littelfuse, Inc. Single FETs, MOSFETs IXFH12N100F

Description
MOSFET N-CH 1000V 12A TO247AD
Request a Quote Datasheet
Description
MOSFET N-CH 1000V 12A TO247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH12N100F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH12N100F
Single FETs, MOSFETs IXFH12N100F
MOSFET N-CH 1000V 12A TO247AD

MOSFET N-CH 1000V 12A TO247AD

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXFH12N100F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH12N100F-ND
Single FETs, MOSFETs 238-IXFH12N100F-ND
N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F - 1191043-IXFH12N100F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F
1191043-IXFH12N100F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F 1191043-IXFH12N100F
Manufacturer: IXYS Win Source Part Number: 1191043-IXFH12N100F Series: HiPerRF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: IXFH12N100F Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 1.05 Ohm @ 6A, 10V Alternative Parts (Cross-Reference): STW13N95K3; STW12NK95Z; STW12NK90Z; Introduction Date: September 14, 2001 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1191043-IXFH12N100F
Series: HiPerRF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: IXFH12N100F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
Alternative Parts (Cross-Reference): STW13N95K3; STW12NK95Z; STW12NK90Z;
Introduction Date: September 14, 2001
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Transistor - 38654157 - Radwell International
Willingboro, NJ, United States
Transistor
38654157
Transistor 38654157
TRANSISTOR, MOSFET, THROUGH HOLE, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1KV, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):1.05OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:-. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, THROUGH HOLE, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1KV, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):1.05OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:-. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 12 Amps 1000V 1.05 Rds

MOSFET 12 Amps 1000V 1.05 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH12N100F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH12N100F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH12N100F
MOSFET N-CH 1000V 12A TO247AD

MOSFET N-CH 1000V 12A TO247AD

Supplier's Site
MOSFET N-CH 1000V 12A TO-247AD - 401-IXFH12N100F - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1000V 12A TO-247AD
401-IXFH12N100F
MOSFET N-CH 1000V 12A TO-247AD 401-IXFH12N100F
MOSFET N-CH 1000V 12A TO-247AD

MOSFET N-CH 1000V 12A TO-247AD

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH12N100F 238-IXFH12N100F-ND 1191043-IXFH12N100F 38654157 IXFH12N100F IXFH12N100F 401-IXFH12N100F
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 1000V 12A TO-247AD
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 1000 volts 1000 volts
IDSS 12000 milliamps
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
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