Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F IXFH12N100F

Description
Manufacturer: IXYS Win Source Part Number: 1191043-IXFH12N100F Series: HiPerRF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: IXFH12N100F Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 1.05 Ohm @ 6A, 10V Alternative Parts (Cross-Reference): STW13N95K3; STW12NK95Z; STW12NK90Z; Introduction Date: September 14, 2001 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 30
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Description
Manufacturer: IXYS Win Source Part Number: 1191043-IXFH12N100F Series: HiPerRF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: IXFH12N100F Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 1.05 Ohm @ 6A, 10V Alternative Parts (Cross-Reference): STW13N95K3; STW12NK95Z; STW12NK90Z; Introduction Date: September 14, 2001 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 30
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F - 1191043-IXFH12N100F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F
1191043-IXFH12N100F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F 1191043-IXFH12N100F
Manufacturer: IXYS Win Source Part Number: 1191043-IXFH12N100F Series: HiPerRF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: IXFH12N100F Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247AD (IXFH) Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Maximum) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 1.05 Ohm @ 6A, 10V Alternative Parts (Cross-Reference): STW13N95K3; STW12NK95Z; STW12NK90Z; Introduction Date: September 14, 2001 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1191043-IXFH12N100F
Series: HiPerRF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: IXFH12N100F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
Alternative Parts (Cross-Reference): STW13N95K3; STW12NK95Z; STW12NK90Z;
Introduction Date: September 14, 2001
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - IXFH12N100F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH12N100F
Single FETs, MOSFETs IXFH12N100F
MOSFET N-CH 1000V 12A TO247AD

MOSFET N-CH 1000V 12A TO247AD

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXFH12N100F-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH12N100F-ND
Single FETs, MOSFETs 238-IXFH12N100F-ND
N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH12N100F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH12N100F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH12N100F
MOSFET N-CH 1000V 12A TO247AD

MOSFET N-CH 1000V 12A TO247AD

Supplier's Site
MOSFET N-CH 1000V 12A TO-247AD - 401-IXFH12N100F - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1000V 12A TO-247AD
401-IXFH12N100F
MOSFET N-CH 1000V 12A TO-247AD 401-IXFH12N100F
MOSFET N-CH 1000V 12A TO-247AD

MOSFET N-CH 1000V 12A TO-247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 12 Amps 1000V 1.05 Rds

MOSFET 12 Amps 1000V 1.05 Rds

Buy Now Datasheet
Transistor - 38654157 - Radwell International
Willingboro, NJ, United States
Transistor
38654157
Transistor 38654157
TRANSISTOR, MOSFET, THROUGH HOLE, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1KV, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):1.05OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:-. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, THROUGH HOLE, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1KV, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):1.05OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:-. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Radwell International
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191043-IXFH12N100F IXFH12N100F 238-IXFH12N100F-ND IXFH12N100F 401-IXFH12N100F IXFH12N100F 38654157
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 1000V 12A TO-247AD MOSFET Transistor
QG 77 nC
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
Packing Method Tube; Tube Tube; Tube Tube; Tube
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