MOSFET N-CH 1000V 12A TO247AD
Manufacturer: IXYS
Win Source Part Number: 1191043-IXFH12N100F
Series: HiPerRF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: IXFH12N100F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.05 Ohm @ 6A, 10V
Alternative Parts (Cross-Reference): STW13N95K3; STW12NK95Z; STW12NK90Z;
Introduction Date: September 14, 2001
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 30
N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 1000V 12A TO247AD
MOSFET N-CH 1000V 12A TO-247AD
TRANSISTOR, MOSFET, THROUGH HOLE, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1KV, CONTINUOUS DRAIN CURRENT ID:12A, ON RESISTANCE RDS(ON):1.05OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, MSL:-. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFH12N100F | 1191043-IXFH12N100F | 238-IXFH12N100F-ND | IXFH12N100F | IXFH12N100F | 401-IXFH12N100F | 38654157 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH12N100F | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 1000V 12A TO-247AD | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 1000 volts | 1000 volts | |||||
| IDSS | 12000 milliamps | ||||||
| PD | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts |
