Manufacturer: IXYS
Win Source Part Number: 1191042-IXFH10N80P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Family Name: IXFH10N80P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2050pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.1 Ohm @ 5A, 10V
Alternative Parts (Cross-Reference): FQA10N80_NL; FQAF10N80; FQA10N80;
Introduction Date: November 07, 2005
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 30
N-Channel 800V 10A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 800V 10A TO247AD
MOSFET N-CH 800V 10A TO-247
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191042-IXFH10N80P | IXFH10N80P-ND | IXFH10N80P | IXFH10N80P | 401-IXFH10N80P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH10N80P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 800V 10A TO-247 |
| QG | 40 nC | ||||
| PD | 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | 10V | ||
| Packing Method | Tube; Tube | Tube; Tube | Tube; Tube |
