Zilog Single FETs, MOSFETs IXFC80N08

Description
N-Channel 80V 80A (Tc) 230W (Tc) Through Hole ISOPLUS220™
Request a Quote Datasheet
Description
N-Channel 80V 80A (Tc) 230W (Tc) Through Hole ISOPLUS220™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFC80N08-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFC80N08-ND
Single FETs, MOSFETs IXFC80N08-ND
N-Channel 80V 80A (Tc) 230W (Tc) Through Hole ISOPLUS220™

N-Channel 80V 80A (Tc) 230W (Tc) Through Hole ISOPLUS220™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFC80N08 - 122705-IXFC80N08 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFC80N08
122705-IXFC80N08
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFC80N08 122705-IXFC80N08
Manufacturer: IXYS Win Source Part Number: 122705-IXFC80N08 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOPLUS220 Dimension: ISOPLUS220 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 180nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 122705-IXFC80N08
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ISOPLUS220
Dimension: ISOPLUS220
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 4800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFC80N08 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFC80N08
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFC80N08
MOSFET N-CH 80V 80A ISOPLUS220

MOSFET N-CH 80V 80A ISOPLUS220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFC80N08-ND 122705-IXFC80N08 IXFC80N08
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFC80N08 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type ISOPLUS220™ SOT3; ISOPLUS220 ISOPLUS220TM
V(BR)DSS 80 volts
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