Zilog Single FETs, MOSFETs IXFB70N60Q2

Description
N-Channel 600V 70A (Tc) 890W (Tc) Through Hole PLUS264™
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Description
N-Channel 600V 70A (Tc) 890W (Tc) Through Hole PLUS264™
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFB70N60Q2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB70N60Q2-ND
Single FETs, MOSFETs IXFB70N60Q2-ND
N-Channel 600V 70A (Tc) 890W (Tc) Through Hole PLUS264™

N-Channel 600V 70A (Tc) 890W (Tc) Through Hole PLUS264™

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB70N60Q2 - 1191040-IXFB70N60Q2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB70N60Q2
1191040-IXFB70N60Q2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB70N60Q2 1191040-IXFB70N60Q2
Manufacturer: IXYS Win Source Part Number: 1191040-IXFB70N60Q2 Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Family Name: IXFB 70N60Q2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: PLUS264 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 265nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 12000pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 890W (Tc) Rds On (Maximum) @ Id, Vgs: 88 mOhm @ 35A, 10V Alternative Parts (Cross-Reference): APT60M80L2VR; APT60M80L2VRG; APT60M75L2FLLG; Introduction Date: March 07, 2003 ECCN: EAR99 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191040-IXFB70N60Q2
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Family Name: IXFB 70N60Q2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: PLUS264
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 265nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 12000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 890W (Tc)
Rds On (Maximum) @ Id, Vgs: 88 mOhm @ 35A, 10V
Alternative Parts (Cross-Reference): APT60M80L2VR; APT60M80L2VRG; APT60M75L2FLLG;
Introduction Date: March 07, 2003
ECCN: EAR99
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET 70 Amps 600V

MOSFET 70 Amps 600V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFB70N60Q2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFB70N60Q2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFB70N60Q2
MOSFET N-CH 600V 70A PLUS264

MOSFET N-CH 600V 70A PLUS264

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFB70N60Q2-ND 1191040-IXFB70N60Q2 IXFB70N60Q2 IXFB70N60Q2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB70N60Q2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-264-3, TO-264AA SOT3 TO-264-3, TO-264AA
QG 265 nC
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