Manufacturer: IXYS
Win Source Part Number: 1191039-IXFB60N80P
Series: HiPerFET, PolarHT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Family Name: IXFB 60N80P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: PLUS264
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 18000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1250W (Tc)
Rds On (Maximum) @ Id, Vgs: 140 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): STW30N80K5; APT8014L2LLG; STW23N85K5;
Introduction Date: May 13, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
N-Channel 800V 60A (Tc) 1250W (Tc) Through Hole PLUS264™
MOSFET N-CH 800V 60A PLUS264
MOSFET N-CH 800V 60A PLUS264
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1191039-IXFB60N80P | 238-IXFB60N80P-ND | IXFB60N80P | IXFB60N80P | IXFB60N80P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFB60N80P | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| QG | 250 nC | ||||
| PD | 1.25E6 milliwatts | 1.25E6 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | |
| Packing Method | Tube; Tube | Tube; Tube |
