N-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA)
Manufacturer: IXYS
Win Source Part Number: 809418-IXFA4N100Q
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000V
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 150W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 3Ohm at 2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 39nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1050pF at 25V
Current - Continuous Drain (Id) at 25°C: 4A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 1.5mA
Maximum Vgs: ±20V
MOSFET N-CH 1000V 4A TO263
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 1000V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFA4N100Q-ND | 809418-IXFA4N100Q | IXFA4N100Q | 74436080 | IXFA4N100Q |
| Product Name | Single FETs, MOSFETs | FETs - Single - IXFA4N100Q | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| QG | 39 nC |
