Zilog FETs - Single - IXFA4N100Q IXFA4N100Q

Description
Manufacturer: IXYS Win Source Part Number: 809418-IXFA4N100Q Packaging: Tube Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000V Supplier Device Package: TO-263 (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 150W (Tc) Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 3Ohm at 2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 39nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1050pF at 25V Current - Continuous Drain (Id) at 25°C: 4A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 1.5mA Maximum Vgs: ±20V
  • FETs - Single - IXFA4N100Q - 809418-IXFA4N100Q - Win Source Electronics
    Win Source Electronics
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  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA4N100Q - Shenzhen Shengyu Electronics Technology Limited
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  • Transistor - 74436080 - Radwell International
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Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 809418-IXFA4N100Q Packaging: Tube Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000V Supplier Device Package: TO-263 (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 150W (Tc) Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 3Ohm at 2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 39nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1050pF at 25V Current - Continuous Drain (Id) at 25°C: 4A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 1.5mA Maximum Vgs: ±20V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFA4N100Q - 809418-IXFA4N100Q - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFA4N100Q
809418-IXFA4N100Q
FETs - Single - IXFA4N100Q 809418-IXFA4N100Q
Manufacturer: IXYS Win Source Part Number: 809418-IXFA4N100Q Packaging: Tube Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000V Supplier Device Package: TO-263 (IXFA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 150W (Tc) Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 3Ohm at 2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 39nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1050pF at 25V Current - Continuous Drain (Id) at 25°C: 4A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 1.5mA Maximum Vgs: ±20V

Manufacturer: IXYS
Win Source Part Number: 809418-IXFA4N100Q
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000V
Supplier Device Package: TO-263 (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 150W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 3Ohm at 2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 39nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1050pF at 25V
Current - Continuous Drain (Id) at 25°C: 4A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 1.5mA
Maximum Vgs: ±20V

Buy Now Datasheet
Single FETs, MOSFETs - IXFA4N100Q-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA4N100Q-ND
Single FETs, MOSFETs IXFA4N100Q-ND
N-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFA4N100Q
MOSFET IXFA4N100Q
MOSFET 4 Amps 1000V 2.8 Rds

MOSFET 4 Amps 1000V 2.8 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA4N100Q - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA4N100Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA4N100Q
MOSFET N-CH 1000V 4A TO263

MOSFET N-CH 1000V 4A TO263

Supplier's Site
Transistor - 74436080 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
74436080
Transistor 74436080
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 1000V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 1000V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 809418-IXFA4N100Q IXFA4N100Q-ND IXFA4N100Q IXFA4N100Q 74436080
Product Name FETs - Single - IXFA4N100Q Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel N-Channel
QG 39 nC
PD 150000 milliwatts
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