MOSFET N-CH 650V 22A TO263
MOSFET N-CH 650V 22A TO263
MOSFET N-CH 650V 22A TO263
N-Channel 650V 22A (Tc) 390W (Tc) Surface Mount TO-263 (D2Pak)
Win Source Part Number: 1066176-IXFA22N65X2-
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Ultra X2
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Power Dissipation (Max): 390W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IXFA22N65X2-TRLIXFA2
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: 238-IXFA22N65X2-TRLC
Base Product Number: IXFA22
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 22A TO263
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFA22N65X2-TRL | 238-IXFA22N65X2-TRLDKR-ND | 1066176-IXFA22N65X2-TRL | IXFA22N65X2-TRL | IXFA22N65X2-TRL |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 650 volts | ||||
| IDSS | 22000 milliamps |