Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA130N10T2 IXFA130N10T2

Description
Manufacturer: IXYS Win Source Part Number: 731579-IXFA130N10T2 Series: GigaMOS, HiPerFET, TrenchT2 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Family Name: IXFA130N10T2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 360W (Tc) Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 65A, 10V ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA130N10T2 - 731579-IXFA130N10T2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 238-IXFA130N10T2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IXFA130N10T2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA130N10T2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 731579-IXFA130N10T2 Series: GigaMOS, HiPerFET, TrenchT2 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Family Name: IXFA130N10T2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 360W (Tc) Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 65A, 10V ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 50
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA130N10T2 - 731579-IXFA130N10T2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA130N10T2
731579-IXFA130N10T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA130N10T2 731579-IXFA130N10T2
Manufacturer: IXYS Win Source Part Number: 731579-IXFA130N10T2 Series: GigaMOS, HiPerFET, TrenchT2 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Family Name: IXFA130N10T2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXFA) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 360W (Tc) Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 65A, 10V ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 731579-IXFA130N10T2
Series: GigaMOS, HiPerFET, TrenchT2
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Family Name: IXFA130N10T2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263 (IXFA)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 65A, 10V
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFA130N10T2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFA130N10T2-ND
Single FETs, MOSFETs 238-IXFA130N10T2-ND
N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount TO-263 (IXFA)

Buy Now Datasheet
Single FETs, MOSFETs - IXFA130N10T2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFA130N10T2
Single FETs, MOSFETs IXFA130N10T2
MOSFET N-CH 100V 130A TO263

MOSFET N-CH 100V 130A TO263

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFA130N10T2
MOSFET IXFA130N10T2
MOSFET Trench T2 HiperFET Power MOSFET

MOSFET Trench T2 HiperFET Power MOSFET

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA130N10T2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA130N10T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA130N10T2
MOSFET N-CH 100V 130A TO263

MOSFET N-CH 100V 130A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 731579-IXFA130N10T2 238-IXFA130N10T2-ND IXFA130N10T2 IXFA130N10T2 IXFA130N10T2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA130N10T2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 130 nC
PD 360000 milliwatts 360000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tube; Tube Tube; Tube
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