MOSFET N-CH 100V 130A TO263
N-Channel 100V 130A (Tc) 360W (Tc) Surface Mount TO-263 (IXFA)
Manufacturer: IXYS
Win Source Part Number: 731579-IXFA130N10T2
Series: GigaMOS, HiPerFET, TrenchT2
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Family Name: IXFA130N10T2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263 (IXFA)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.1 mOhm @ 65A, 10V
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MOSFET Trench T2 HiperFET Power MOSFET
MOSFET N-CH 100V 130A TO263
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFA130N10T2 | 238-IXFA130N10T2-ND | 731579-IXFA130N10T2 | IXFA130N10T2 | IXFA130N10T2 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFA130N10T2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 130000 milliamps | ||||
| PD | 360000 milliwatts | 360000 milliwatts |
