IGBT NPT 1200V 36A 200W Through Hole TO-247AD
Manufacturer: IXYS
Win Source Part Number: 1324199-IXEH25N120D1
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 200 W
Reverse Recovery Time (trr): 130 ns
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 36 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 100 nC
Test Condition: 600V, 20A, 68Ohm, 15V
Supplier Device Package: TO-247AD
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 78
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)
IGBT 1200V 36A 200W TO247AD Product overview: IXEH25N120D1 from IXYS / Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 36A, 200W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 36A, 200W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXEH25N120D1 can be used for catalog matching and distributor lookup.
IGBT 1200V 36A 200W TO247AD
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXEH25N120D1-ND | 1324199-IXEH25N120D1 | 279-IXEH25N120D1 | IXEH25N120D1 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | 1200V 36A 200W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |