Zilog Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IXDP35N60B

Description
Win Source Part Number: 1348580-IXDP35N60B Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 50 Power - Max: 250 W IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 70 A Switching Energy: 1.6mJ (on) , 800µJ (off) Input Type: Standard Gate Charge: 120 nC Test Condition: 300V, 35A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 32 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXDP35 California Prop 65: Warning Information Current - Collector (Ic) (Max): 60 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1348580-IXDP35N60B - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - IXDP35N60B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1348580-IXDP35N60B Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 50 Power - Max: 250 W IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 70 A Switching Energy: 1.6mJ (on) , 800µJ (off) Input Type: Standard Gate Charge: 120 nC Test Condition: 300V, 35A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 32 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXDP35 California Prop 65: Warning Information Current - Collector (Ic) (Max): 60 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
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Suppliers

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Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1348580-IXDP35N60B - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1348580-IXDP35N60B
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1348580-IXDP35N60B
Win Source Part Number: 1348580-IXDP35N60B Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 50 Power - Max: 250 W IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 70 A Switching Energy: 1.6mJ (on) , 800µJ (off) Input Type: Standard Gate Charge: 120 nC Test Condition: 300V, 35A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 32 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXDP35 California Prop 65: Warning Information Current - Collector (Ic) (Max): 60 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A

Win Source Part Number: 1348580-IXDP35N60B
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Package: Tube
Standard Package: 50
Power - Max: 250 W
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 70 A
Switching Energy: 1.6mJ (on) , 800µJ (off)
Input Type: Standard
Gate Charge: 120 nC
Test Condition: 300V, 35A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXDP35
California Prop 65: Warning Information
Current - Collector (Ic) (Max): 60 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IXDP35N60B
IGBT Transistors IXDP35N60B
IGBT Transistors 35 Amps 600V

IGBT Transistors 35 Amps 600V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXDP35N60B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXDP35N60B
Discrete Semiconductor Products - Transistors - IGBTs IXDP35N60B
IGBT 600V 60A 250W TO220AB

IGBT 600V 60A 250W TO220AB

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1348580-IXDP35N60B IXDP35N60B IXDP35N60B
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCES 600 volts
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