Manufacturer: IXYS
Win Source Part Number: 847079-IXDN75N120
Features: IGBT Module 1200 V 150 A 660 W
Package: Tube
Family Name: IXDN75
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 10
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 39 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
IGBT MOD 1200V 150A 660W SOT227B
IGBT Module NPT Single 1200V 150A 660W Chassis Mount SOT-227B
IGBT MOD 1200V 150A 660W SOT227B
IGBT MOD 1200V 150A 660W SOT227B
INSULATED GATE BIPOLAR TRANSISTOR, 150A I(C), 1200V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY
IGBT Transistors 75 Amps 1200V
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 847079-IXDN75N120 | IXDN75N120 | IXDN75N120-ND | 401-IXDN75N120 | IXDN75N120 | 11735684 | IXDN75N120 |
| Product Name | IGBTs - Modules - IXDN75N120 | IGBT Modules | IGBT Modules | IGBT MOD 1200V 150A 660W SOT227B | Discrete Semiconductor Products - Transistors - IGBTs | IGBT | IGBT Transistors |
| Package Type | SOT3 | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | ||||
| Features | IGBT Module 1200 V 150 A 660 W | ||||||
| Polarity | Single | N-Channel; N-CHANNEL | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||||
| Transistor Technology / Material | SILICON |
