Manufacturer: IXYS
Win Source Part Number: 847079-IXDN75N120
Features: IGBT Module 1200 V 150 A 660 W
Package: Tube
Family Name: IXDN75
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 10
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 39 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
IGBT Module NPT Single 1200V 150A 660W Chassis Mount SOT-227B
IGBT MOD 1200V 150A 660W SOT227B
IGBT MOD 1200V 150A 660W SOT227B
IGBT MOD 1200V 150A 660W SOT227B
IGBT Transistors 75 Amps 1200V
INSULATED GATE BIPOLAR TRANSISTOR, 150A I(C), 1200V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 847079-IXDN75N120 | IXDN75N120-ND | IXDN75N120 | 401-IXDN75N120 | IXDN75N120 | IXDN75N120 | 11735684 |
| Product Name | IGBTs - Modules - IXDN75N120 | IGBT Modules | IGBT Modules | IGBT MOD 1200V 150A 660W SOT227B | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | IGBT |
| Package Type | SOT3 | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | ||||
| Features | IGBT Module 1200 V 150 A 660 W | ||||||
| Polarity | Single | N-Channel; N-CHANNEL | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||||
| Transistor Technology / Material | SILICON |
