Zilog Single IGBTs IXBX75N170A

Description
IGBT 1700V 110A 1040W Through Hole PLUS247™-3
Request a Quote Datasheet
Description
IGBT 1700V 110A 1040W Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXBX75N170A-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXBX75N170A-ND
Single IGBTs IXBX75N170A-ND
IGBT 1700V 110A 1040W Through Hole PLUS247™-3

IGBT 1700V 110A 1040W Through Hole PLUS247™-3

Buy Now Datasheet
Single IGBTs - IXBX75N170A - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IXBX75N170A
Single IGBTs IXBX75N170A
IGBT 1700V 110A 1040W PLUS247

IGBT 1700V 110A 1040W PLUS247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1355062-IXBX75N170A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1355062-IXBX75N170A
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1355062-IXBX75N170A
Win Source Part Number: 1355062-IXBX75N170A Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: BIMOSFET™ Package: Tube Product Status: Active Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Base Product Number: IXBX75 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 1360V, 42A, 1Ohm, 15V Reverse Recovery Time (trr): 360 ns Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1040 W Input Type: Standard Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A Switching Energy: 3.8mJ (off) Gate Charge: 358 nC Td (on/off) @ 25°C: 26ns/418ns

Win Source Part Number: 1355062-IXBX75N170A
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: IXYS
Series: BIMOSFET™
Package: Tube
Product Status: Active
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Base Product Number: IXBX75
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 1360V, 42A, 1Ohm, 15V
Reverse Recovery Time (trr): 360 ns
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1040 W
Input Type: Standard
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A
Switching Energy: 3.8mJ (off)
Gate Charge: 358 nC
Td (on/off) @ 25°C: 26ns/418ns

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXBX75N170A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXBX75N170A
Discrete Semiconductor Products - Transistors - IGBTs IXBX75N170A
IGBT 1700V 110A 1040W PLUS247

IGBT 1700V 110A 1040W PLUS247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXBX75N170A
IGBT Transistors IXBX75N170A
IGBT Transistors 65Amps 1700V

IGBT Transistors 65Amps 1700V

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBX75N170A-ND IXBX75N170A 1355062-IXBX75N170A IXBX75N170A IXBX75N170A
Product Name Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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