Manufacturer: IXYS
Win Source Part Number: 1324505-IXBX50N360HV
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 660 W
Reverse Recovery Time (trr): 1.7 µs
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector (Ic) (Max): 125 A
Current - Collector Pulsed (Icm): 420 A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
Input Type: Standard
Gate Charge: 210 nC
Td (on/off) @ 25°C: 46ns/205ns
Test Condition: 960V, 50A, 5Ohm, 15V
Supplier Device Package: TO-247PLUS-HV
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3 Variant
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXBX50
RoHS Status: ROHS3 Compliant
IGBT 3600V 125A 660W Through Hole TO-247PLUS-HV
IGBT 3600V 125A 660W TO-247PLUS
IGBT Transistors 3600V/125A Reverse Conducting IGBT
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1324505-IXBX50N360HV | IXBX50N360HV-ND | IXBX50N360HV | IXBX50N360HV |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCES | 3600 volts |
