IGBT 1700V 80A 360W Surface Mount TO-268AA
IGBT 1700V 80A 360W TO268
Win Source Part Number: 1350573-IXBT42N170
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Series: BIMOSFET™
Package: Tube
Standard Package: 30
Power - Max: 360 W
Reverse Recovery Time (trr): 1.32 µs
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Input Type: Standard
Gate Charge: 188 nC
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: TO-268AA
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXBT42
California Prop 65: Warning Information
Current - Collector (Ic) (Max): 80 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
IGBT Transistors BIMOSFET 1700V 75A
IGBT 1700V 80A 360W TO268
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBT42N170-ND | IXBT42N170 | 1350573-IXBT42N170 | IXBT42N170 | IXBT42N170 |
| Product Name | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
