Win Source Part Number: 1349899-IXBK55N300
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Series: BIMOSFET™
Package: Tube
Standard Package: 25
Power - Max: 625 W
Reverse Recovery Time (trr): 1.9 µs
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 600 A
Input Type: Standard
Gate Charge: 335 nC
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXBK55
California Prop 65: Warning Information
Current - Collector (Ic) (Max): 130 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
IGBT 3000V 130A 625W Through Hole TO-264AA
IGBT 3000V 130A 625W TO264
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IGBT 3000V 130A 625W TO264
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1349899-IXBK55N300 | IXBK55N300-ND | IXBK55N300 | IXBK55N300 | IXBK55N300 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 3000 volts |
