Zilog Single IGBTs IXBH2N250

Description
IGBT 2500V 5A 32W Through Hole TO-247AD
Request a Quote Datasheet
Description
IGBT 2500V 5A 32W Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXBH2N250-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXBH2N250-ND
Single IGBTs IXBH2N250-ND
IGBT 2500V 5A 32W Through Hole TO-247AD

IGBT 2500V 5A 32W Through Hole TO-247AD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1193176-IXBH2N250 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1193176-IXBH2N250
Discrete Semiconductor Products - Transistors - IGBTs - Single 1193176-IXBH2N250
Win Source Part Number: 1193176-IXBH2N250 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: BIMOSFET™ Package: Tube Standard Package: 30 Power - Max: 32 W Reverse Recovery Time (trr): 920 ns Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector (Ic) (Max): 5 A Current - Collector Pulsed (Icm): 13 A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A Input Type: Standard Gate Charge: 10.6 nC Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 77 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXBH2

Win Source Part Number: 1193176-IXBH2N250
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: BIMOSFET™
Package: Tube
Standard Package: 30
Power - Max: 32 W
Reverse Recovery Time (trr): 920 ns
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5 A
Current - Collector Pulsed (Icm): 13 A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Input Type: Standard
Gate Charge: 10.6 nC
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXBH2

Buy Now Datasheet
Single IGBTs - IXBH2N250 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IXBH2N250
Single IGBTs IXBH2N250
IGBT 2500V 5A 32W TO247

IGBT 2500V 5A 32W TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXBH2N250 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXBH2N250
Discrete Semiconductor Products - Transistors - IGBTs IXBH2N250
IGBT 2500V 5A 32W TO247

IGBT 2500V 5A 32W TO247

Supplier's Site
IGBT 2500V 5A 32W TO247 - 401-IXBH2N250 - Utmel Electronic Limited
Hong Kong, China
IGBT 2500V 5A 32W TO247
401-IXBH2N250
IGBT 2500V 5A 32W TO247 401-IXBH2N250
IGBT 2500V 5A 32W TO247

IGBT 2500V 5A 32W TO247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBH2N250-ND 1193176-IXBH2N250 IXBH2N250 IXBH2N250 401-IXBH2N250
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT 2500V 5A 32W TO247
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3
Packing Method Tube Tube; Tube Tube; Tube
VCES 2500 volts
Polarity N-Channel; N-CHANNEL
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