Zilog Single IGBTs IXBH12N300

Description
IGBT 3000V 30A 160W Through Hole TO-247AD
Request a Quote Datasheet
Description
IGBT 3000V 30A 160W Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXBH12N300-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXBH12N300-ND
Single IGBTs IXBH12N300-ND
IGBT 3000V 30A 160W Through Hole TO-247AD

IGBT 3000V 30A 160W Through Hole TO-247AD

Buy Now Datasheet
Single IGBTs - IXBH12N300 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IXBH12N300
Single IGBTs IXBH12N300
IGBT 3000V 30A 160W TO247

IGBT 3000V 30A 160W TO247

Supplier's Site Datasheet
IGBTs - Single - IXBH12N300 - 205668-IXBH12N300 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXBH12N300
205668-IXBH12N300
IGBTs - Single - IXBH12N300 205668-IXBH12N300
Manufacturer: IXYS Win Source Part Number: 205668-IXBH12N300 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 1.4μs Input Type: Standard Gate Charge: 62nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXBH) Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 3000V Maximum Power Dissipation: 160W Pulsed Collector Current: 100A Collector-emitter saturation voltage(Max): 3.2V @ 15V, 12A Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205668-IXBH12N300
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 1.4μs
Input Type: Standard
Gate Charge: 62nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXBH)
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 3000V
Maximum Power Dissipation: 160W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 3.2V @ 15V, 12A
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXBH12N300 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXBH12N300
Discrete Semiconductor Products - Transistors - IGBTs IXBH12N300
IGBT 3000V 30A 160W TO247

IGBT 3000V 30A 160W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXBH12N300
IGBT Transistors IXBH12N300
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT

IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBH12N300-ND IXBH12N300 205668-IXBH12N300 IXBH12N300 IXBH12N300
Product Name Single IGBTs Single IGBTs IGBTs - Single - IXBH12N300 Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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