Win Source Part Number: 1005543-IXBF55N300
Category: Discrete Semiconductor Products>Transistors
Series: BIMOSFET™
Package: Tube
Standard Package: 25
Power - Max: 357 W
Reverse Recovery Time (trr): 1.9 µs
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector (Ic) (Max): 86 A
Current - Collector Pulsed (Icm): 600 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Input Type: Standard
Gate Charge: 335 nC
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Supplier Device Package: ISOPLUS i4-PAC™
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: 238-IXBF55N300
DISC IGBT BIMSFT-VERYHIVOLT I4-P
IGBT 3000V 86A 357W Through Hole ISOPLUS i4-PAC™
DISC IGBT BIMSFT-VERYHIVOLT I4-P
IGBT Transistors High Voltage High Gain BIMOSFET
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1005543-IXBF55N300 | IXBF55N300 | 238-IXBF55N300-ND | IXBF55N300 | IXBF55N300 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCES | 3000 volts |
