The IXA4IF1200UC is a 1200 V XPT IGBT with a 9 A collector current rating at 25 °C and a total power dissipation of 45 W in a TO-252 (DPak) surface-mount package. It features a collector-emitter saturation voltage of 1.8 V at 3 A and 25 °C, a gate-emitter threshold voltage of 5.4 to 6.5 V, and a short-circuit withstand time of 10 µs. The device includes a copackaged SONIC™ diode with a 10 A forward current rating and reverse recovery time of 350 ns. It meets RoHS standards and its epoxy encapsulation complies with UL 94 V-0. Thermal resistance is 2.7 K/W from junction to case for the IGBT and 3 K/W for the diode. The operating temperature range is -40 °C to 125 °C.
IGBT PT 1200V 9A 45W Surface Mount TO-252AA
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXA4IF1200UC-TRL-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 150 C (-40 to 302 F) |
