The IXA4IF1200TC is a 1200 V, 9 A insulated gate bipolar transistor (IGBT) with a copackaged diode, designed for applications such as AC motor drives, solar inverters, and uninterruptible power supplies. It features a rugged XPT design with short circuit capability for 10 µs, low gate charge, and low EMI. The device is mounted in a TO-268AA (D3Pak) package measuring 13.80-14.00 mm in length and 15.85-16.05 mm in width, with a maximum power dissipation of 45 W at 25°C. It operates with a junction temperature up to 150°C and meets RoHS compliance and UL 94 V-0 epoxy standards. Thermal resistance from junction to case is 2.7 K/W for the IGBT and 3 K/W for the diode.
IGBT PT 1200V 9A 45W Surface Mount TO-268AA
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXA4IF1200TC-TUB-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 150 C (-40 to 302 F) |
