ITG Electronics, Inc. 1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer T201213-8-A

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1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer
  • 1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer - T201213-8-A - ITG Electronics, Inc.
    ITG Electronics, Inc.
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Description
1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer
Datasheet

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1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer - T201213-8-A - ITG Electronics, Inc.
ITG Electronics, Inc.
Elmsford, NY, USA
1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-8-A
1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer T201213-8-A
1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer

1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer

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Technical Specifications

  ITG Electronics, Inc.
Product Category Transformers
Product Number T201213-8-A
Product Name 1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer
Category Signal
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