ITG Electronics, Inc. 1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform T201213-10-B

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1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform
  • 1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform - T201213-10-B - ITG Electronics, Inc.
    ITG Electronics, Inc.
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Description
1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform
Datasheet

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1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform - T201213-10-B - ITG Electronics, Inc.
ITG Electronics, Inc.
Elmsford, NY, USA
1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform
T201213-10-B
1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform T201213-10-B
1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform

1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform

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Technical Specifications

  ITG Electronics, Inc.
Product Category Transformers
Product Number T201213-10-B
Product Name 1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform
Category Signal
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