Inventchip Technology Single FETs, MOSFETs IV2Q07014T4Z

IV2Q07014T4Z is a second-generation silicon carbide MOSFET designed for high-voltage automotive and power conversion applications, featuring a 750 V drain-source voltage rating and a static drain-source on-resistance of 14 mΩ at 25°C. It is packaged in a TO-247-4 case with a maximum continuous drain current of 138 A at 25°C and supporting a junction operating temperature range of -55°C to 175°C. The device includes a Kelvin source connection for improved gate drive performance, a reverse recovery time of 39 ns, and a thermal resistance from junction to case of 0.27 °C/W. It operates with a recommended gate drive voltage of 18 V ±0.5 V and supports high-speed switching with low input and output capacitance.